Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Makoto Okano; Shu man Liu; Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1016/j.physe.2007.09.043

Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Makoto Okano
, Shu man Liu
, Masahiro Yoshita
, Hidefumi Akiyama
, Loren N. Pfeiffer
, Ken W. West

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

Original language	English
Pages (from-to)	1947-1949
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.09.043
Publication status	Published - 2008 Apr
Externally published	Yes

Keywords

Carrier injection
Laser diode
Microscopic-EL imaging
Quantum wire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2007.09.043

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@article{75ebf468b34e4b6788563dcbdc1a2654,

title = "Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K",

abstract = "We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9\% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.",

keywords = "Carrier injection, Laser diode, Microscopic-EL imaging, Quantum wire",

author = "Makoto Okano and Liu, \{Shu man\} and Masahiro Yoshita and Hidefumi Akiyama and Pfeiffer, \{Loren N.\} and West, \{Ken W.\}",

note = "Funding Information: This work was partly supported by a Grant-in-Aid from the MEXT, Japan.",

year = "2008",

month = apr,

doi = "10.1016/j.physe.2007.09.043",

language = "English",

volume = "40",

pages = "1947--1949",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

AU - Okano, Makoto

AU - Liu, Shu man

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid from the MEXT, Japan.

PY - 2008/4

Y1 - 2008/4

N2 - We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

AB - We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

KW - Carrier injection

KW - Laser diode

KW - Microscopic-EL imaging

KW - Quantum wire

UR - https://www.scopus.com/pages/publications/41349100224

UR - https://www.scopus.com/pages/publications/41349100224#tab=citedBy

U2 - 10.1016/j.physe.2007.09.043

DO - 10.1016/j.physe.2007.09.043

M3 - Article

AN - SCOPUS:41349100224

SN - 1386-9477

VL - 40

SP - 1947

EP - 1949

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 6

ER -

Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Abstract

Keywords

ASJC Scopus subject areas

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