Defect levels in chromium-doped silicon

Takemitsu Kunio; Tatsuya Yamazaki; Eiji Ohta; Makoto Sakata

doi:10.1016/0038-1101(83)90117-X

Defect levels in chromium-doped silicon

Takemitsu Kunio, Tatsuya Yamazaki, Eiji Ohta, Makoto Sakata

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at E_c-0.11 eV, E_c-0.21 eV, E_c-0.28 eV, E_c-0.36 eV and E_c-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at E_c-0.20 eV (donor) and E_c-0.43 eV (acceptor). A donor level was also observed at E_v + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σ_n = 4.1 × 10^-15 cm² for the upper donor at E_c-0.20 eV, σ_n = 2.0 × 10^-16 cm² for the acceptor at E_c -0.43 eV and σ_p = 9.1 × 10^-18 cm² for the lower donor at E_v + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Solid State Electronics
Volume	26
Issue number	2
DOIs	https://doi.org/10.1016/0038-1101(83)90117-X
Publication status	Published - 1983 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(83)90117-X

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@article{caac08123fe54825b819e69486dba412,

title = "Defect levels in chromium-doped silicon",

abstract = "The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at Ec-0.11 eV, Ec-0.21 eV, Ec-0.28 eV, Ec-0.36 eV and Ec-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at Ec-0.20 eV (donor) and Ec-0.43 eV (acceptor). A donor level was also observed at Ev + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σn = 4.1 × 10-15 cm2 for the upper donor at Ec-0.20 eV, σn = 2.0 × 10-16 cm2 for the acceptor at Ec -0.43 eV and σp = 9.1 × 10-18 cm2 for the lower donor at Ev + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.",

author = "Takemitsu Kunio and Tatsuya Yamazaki and Eiji Ohta and Makoto Sakata",

year = "1983",

month = feb,

doi = "10.1016/0038-1101(83)90117-X",

language = "English",

volume = "26",

pages = "155--160",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Defect levels in chromium-doped silicon

AU - Kunio, Takemitsu

AU - Yamazaki, Tatsuya

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1983/2

Y1 - 1983/2

N2 - The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at Ec-0.11 eV, Ec-0.21 eV, Ec-0.28 eV, Ec-0.36 eV and Ec-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at Ec-0.20 eV (donor) and Ec-0.43 eV (acceptor). A donor level was also observed at Ev + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σn = 4.1 × 10-15 cm2 for the upper donor at Ec-0.20 eV, σn = 2.0 × 10-16 cm2 for the acceptor at Ec -0.43 eV and σp = 9.1 × 10-18 cm2 for the lower donor at Ev + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.

AB - The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at Ec-0.11 eV, Ec-0.21 eV, Ec-0.28 eV, Ec-0.36 eV and Ec-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at Ec-0.20 eV (donor) and Ec-0.43 eV (acceptor). A donor level was also observed at Ev + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σn = 4.1 × 10-15 cm2 for the upper donor at Ec-0.20 eV, σn = 2.0 × 10-16 cm2 for the acceptor at Ec -0.43 eV and σp = 9.1 × 10-18 cm2 for the lower donor at Ev + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.

UR - http://www.scopus.com/inward/record.url?scp=0020704349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020704349&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(83)90117-X

DO - 10.1016/0038-1101(83)90117-X

M3 - Article

AN - SCOPUS:0020704349

SN - 0038-1101

VL - 26

SP - 155

EP - 160

JO - Solid State Electronics

JF - Solid State Electronics

IS - 2

ER -

Defect levels in chromium-doped silicon

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