Delay time component of InGaAs MOSFET caused by dynamic source resistance

Masayuki Yamada; Ken Uchida; Yasuyuki Miyamoto

doi:10.1587/transele.E97.C.419

Delay time component of InGaAs MOSFET caused by dynamic source resistance

Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto

Research output: Contribution to journal › Article › peer-review

Abstract

The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (r_s), the value of r_s is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τ_s depends on the current in a way similar to r_s. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter r_s than a Si MOSFET.

Original language	English
Pages (from-to)	419-422
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E97-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E97.C.419
Publication status	Published - 2014 May

Keywords

Delay component
Dynamic source resistance
InGaAs
MOSFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.E97.C.419

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@article{3e952ef3aa9c4b028a970bd988659ed2,

title = "Delay time component of InGaAs MOSFET caused by dynamic source resistance",

abstract = "The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.",

keywords = "Delay component, Dynamic source resistance, InGaAs, MOSFET",

author = "Masayuki Yamada and Ken Uchida and Yasuyuki Miyamoto",

year = "2014",

month = may,

doi = "10.1587/transele.E97.C.419",

language = "English",

volume = "E97-C",

pages = "419--422",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "5",

}

TY - JOUR

T1 - Delay time component of InGaAs MOSFET caused by dynamic source resistance

AU - Yamada, Masayuki

AU - Uchida, Ken

AU - Miyamoto, Yasuyuki

PY - 2014/5

Y1 - 2014/5

N2 - The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.

AB - The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.

KW - Delay component

KW - Dynamic source resistance

KW - InGaAs

KW - MOSFET

UR - http://www.scopus.com/inward/record.url?scp=84899924476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899924476&partnerID=8YFLogxK

U2 - 10.1587/transele.E97.C.419

DO - 10.1587/transele.E97.C.419

M3 - Article

AN - SCOPUS:84899924476

SN - 0916-8524

VL - E97-C

SP - 419

EP - 422

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -

Delay time component of InGaAs MOSFET caused by dynamic source resistance

Abstract

Keywords

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