Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

D. Tanaka; Y. Ikuma; Y. Shoji; M. Kuwahara; X. Wang; K. Kintaka; H. Kawashima; T. Toyosaki; H. Tsuda

doi:10.1049/el.2010.3705

Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

D. Tanaka, Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, T. Toyosaki, H. Tsuda

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

1000-times stable switching operation of an optical gate incorporating a Ge₂Sb₂Te₅ thin film with Si wire waveguides is reported. The phase of the Ge₂Sb₂Te₅ was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550nm and 660nm, respectively.

Original language	English
Pages (from-to)	268-269
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	4
DOIs	https://doi.org/10.1049/el.2010.3705
Publication status	Published - 2011 Feb 17

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.3705

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title = "Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides",

abstract = "1000-times stable switching operation of an optical gate incorporating a Ge2Sb2Te5 thin film with Si wire waveguides is reported. The phase of the Ge2Sb2Te5 was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550nm and 660nm, respectively.",

author = "D. Tanaka and Y. Ikuma and Y. Shoji and M. Kuwahara and X. Wang and K. Kintaka and H. Kawashima and T. Toyosaki and H. Tsuda",

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language = "English",

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AU - Tanaka, D.

AU - Ikuma, Y.

AU - Shoji, Y.

AU - Kuwahara, M.

AU - Wang, X.

AU - Kintaka, K.

AU - Kawashima, H.

AU - Toyosaki, T.

AU - Tsuda, H.

PY - 2011/2/17

Y1 - 2011/2/17

N2 - 1000-times stable switching operation of an optical gate incorporating a Ge2Sb2Te5 thin film with Si wire waveguides is reported. The phase of the Ge2Sb2Te5 was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550nm and 660nm, respectively.

AB - 1000-times stable switching operation of an optical gate incorporating a Ge2Sb2Te5 thin film with Si wire waveguides is reported. The phase of the Ge2Sb2Te5 was reversibly changed from the amorphous state to the crystalline state by the application of pulsed laser irradiation. The extinction ratio was 9.7dB on average, and did not decline throughout the entire sequence of 1000 switching events induced by irradiation. The wavelengths of the signal light and of the laser pulses were 1550nm and 660nm, respectively.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Demonstration of 1000-times switching of phase-change optical gate with Si wire waveguides

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