Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers

Ryota Sawada; Hiroki Tanaka; Ryosuke Kariyama; Kenichi Hirosawa; Fumihiko Kannari

doi:10.1109/CLEOPR.2015.7375939

Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers

Ryota Sawada, Hiroki Tanaka, Ryosuke Kariyama, Kenichi Hirosawa, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a mode-locked Ti: sapphire laser pumped by green InGaN laser diodes from both sides of the crystal An output power of 45 mW is achived in mode-locking with a SESAM (semiconductor saturable absorber mirror).

Original language	English
Title of host publication	2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467371094
DOIs	https://doi.org/10.1109/CLEOPR.2015.7375939
Publication status	Published - 2016 Jan 7
Event	11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28

Publication series

Name	2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Volume	2

Other

Other	11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Country/Territory	Korea, Republic of
City	Busan
Period	15/8/24 → 15/8/28

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/CLEOPR.2015.7375939

Cite this

Sawada, R., Tanaka, H., Kariyama, R., Hirosawa, K., & Kannari, F. (2016). Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 Article 7375939 (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7375939

Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers. / Sawada, Ryota; Tanaka, Hiroki; Kariyama, Ryosuke et al.
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7375939 (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sawada, R, Tanaka, H, Kariyama, R, Hirosawa, K & Kannari, F 2016, Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers. in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015., 7375939, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, vol. 2, Institute of Electrical and Electronics Engineers Inc., 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Busan, Korea, Republic of, 15/8/24. https://doi.org/10.1109/CLEOPR.2015.7375939

Sawada R, Tanaka H, Kariyama R, Hirosawa K, Kannari F. Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7375939. (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015). doi: 10.1109/CLEOPR.2015.7375939

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title = "Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers",

abstract = "We demonstrate a mode-locked Ti: sapphire laser pumped by green InGaN laser diodes from both sides of the crystal An output power of 45 mW is achived in mode-locking with a SESAM (semiconductor saturable absorber mirror).",

author = "Ryota Sawada and Hiroki Tanaka and Ryosuke Kariyama and Kenichi Hirosawa and Fumihiko Kannari",

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doi = "10.1109/CLEOPR.2015.7375939",

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AU - Kannari, Fumihiko

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BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

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Demonstration of Femtosecond Ti:Sapphire laser oscillation pumped by InGaN diode lasers

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