TY - JOUR
T1 - Dephasing processes in transport through two-level quantum dot
AU - Funabashi, Y.
AU - Ohtsubo, K.
AU - Eto, M.
AU - Kawamura, K.
N1 - Funding Information:
This work was partly supported by Grants-in-Aid for Scientific Research in Category C and in Priority Area of “Single Electron Devices and Their High Density Integration” from the Ministry of Education, Science and Culture, Japan.
PY - 1998
Y1 - 1998
N2 - Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.
AB - Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.
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U2 - 10.1016/S0038-1101(98)00032-X
DO - 10.1016/S0038-1101(98)00032-X
M3 - Article
AN - SCOPUS:0032121015
SN - 0038-1101
VL - 42
SP - 1367
EP - 1371
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7-8
ER -