Deposition of fluoropolymer thin films by vacuum-ultraviolet laser ablation

Y. Ueno; T. Fujii; F. Kannari

doi:10.1063/1.112055

Deposition of fluoropolymer thin films by vacuum-ultraviolet laser ablation

Y. Ueno, T. Fujii, F. Kannari

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

Crystalline thin films of polytetrafluoroethylene were deposited on Si(100) wafers by F₂ laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. X-ray photoemission spectra indicated that the composition of the deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100-400 nm, but they were smoothed out at elevated wafer temperature of ∼370 K, while the crystalline feature was still maintained. The refractive index was ∼1.35 at 633 nm.

Original language	English
Pages (from-to)	1370-1372
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	11
DOIs	https://doi.org/10.1063/1.112055
Publication status	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.112055

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title = "Deposition of fluoropolymer thin films by vacuum-ultraviolet laser ablation",

abstract = "Crystalline thin films of polytetrafluoroethylene were deposited on Si(100) wafers by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. X-ray photoemission spectra indicated that the composition of the deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100-400 nm, but they were smoothed out at elevated wafer temperature of ∼370 K, while the crystalline feature was still maintained. The refractive index was ∼1.35 at 633 nm.",

author = "Y. Ueno and T. Fujii and F. Kannari",

year = "1994",

doi = "10.1063/1.112055",

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AU - Fujii, T.

AU - Kannari, F.

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AB - Crystalline thin films of polytetrafluoroethylene were deposited on Si(100) wafers by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. X-ray photoemission spectra indicated that the composition of the deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100-400 nm, but they were smoothed out at elevated wafer temperature of ∼370 K, while the crystalline feature was still maintained. The refractive index was ∼1.35 at 633 nm.

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Deposition of fluoropolymer thin films by vacuum-ultraviolet laser ablation

Abstract

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