Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

T. Fujii; S. Inoue; F. Kannari

doi:10.1016/0169-4332(95)00556-0

Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

T. Fujii, S. Inoue, F. Kannari

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F ₂ laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

Original language	English
Pages (from-to)	621-624
Number of pages	4
Journal	Applied Surface Science
Volume	96-98
DOIs	https://doi.org/10.1016/0169-4332(95)00556-0
Publication status	Published - 1996 Apr

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation",

abstract = " Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect. ",

author = "T. Fujii and S. Inoue and F. Kannari",

year = "1996",

month = apr,

doi = "10.1016/0169-4332(95)00556-0",

language = "English",

volume = "96-98",

pages = "621--624",

journal = "Applied Surface Science",

issn = "0169-4332",

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T1 - Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

AU - Fujii, T.

AU - Inoue, S.

AU - Kannari, F.

PY - 1996/4

Y1 - 1996/4

N2 - Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

AB - Combining deposition of crystalline thin films of polytetrafluoroethylene (PTFE) via F 2 laser (157 nm) ablation with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe is maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy region and a third-order optical nonlinearity, which are induced by the quantum size effect.

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SN - 0169-4332

VL - 96-98

SP - 621

EP - 624

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Deposition of fluoropolymer thin films containing semiconductor microcrystallites by VUV laser ablation

Abstract

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