Abstract
The operation and performances of the suspended-gate single-electron transistor (SET) are investigated through simulation. The movable gate is 3-D optimized, so that low actuation voltage (0.4 V), fast switching (1 ns), and ultralow pull-in energy (0.015 fJ) are simulated. A two-state capacitor model based on the 3-D results is then embedded with a SET analytical model in a SPICE environment to investigate the operation of the device. Through the control of the Coulomb oscillation characteristics, the position of the movable gate enables a background charge insensitive coding of the information. New circuit architectures with applications in cellular nonlinear network and pattern matching are also proposed and simulated.
Original language | English |
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Article number | 5223702 |
Pages (from-to) | 504-512 |
Number of pages | 9 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 9 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 Jul |
Externally published | Yes |
Keywords
- 1-D and 3-D modeling
- cantilever switch
- movable gate
- nanoelectromechanical system (NEMS)
- single-electron transistor (SET)
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering