TY - GEN
T1 - Development of low-voltage fluid-based inclination sensor integrated with CMOS circuitry on ceramic substrate
AU - Manaf, Asrulnizam Bin Abd
AU - Nakamura, Kazumasa
AU - Matsumoto, Yoshinori
PY - 2008/12/1
Y1 - 2008/12/1
N2 - A low-voltage and fluid-based inclination sensor has been developed with one-side electrode structure at the supply voltage of 1.3 V which used in most digital circuitry. The consumption current of the inclination sensor was decreased from 250 μA at Vdd 3.3 V to 38 μA at Vdd 1.3 V by replacing an operational amplifier to an inverter amplifier in the capacitance detection circuitry of the sensor. The sensor and detection circuitry was integrated on one ceramic substrate. The sensitivity, response time and resolution of sensor were 7 mV/deg, 0.7 s and 0.75° respectively at the supply voltage of 1.3 V.
AB - A low-voltage and fluid-based inclination sensor has been developed with one-side electrode structure at the supply voltage of 1.3 V which used in most digital circuitry. The consumption current of the inclination sensor was decreased from 250 μA at Vdd 3.3 V to 38 μA at Vdd 1.3 V by replacing an operational amplifier to an inverter amplifier in the capacitance detection circuitry of the sensor. The sensor and detection circuitry was integrated on one ceramic substrate. The sensitivity, response time and resolution of sensor were 7 mV/deg, 0.7 s and 0.75° respectively at the supply voltage of 1.3 V.
UR - http://www.scopus.com/inward/record.url?scp=67649909547&partnerID=8YFLogxK
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U2 - 10.1109/ICSENS.2008.4716527
DO - 10.1109/ICSENS.2008.4716527
M3 - Conference contribution
AN - SCOPUS:67649909547
SN - 9781424425808
T3 - Proceedings of IEEE Sensors
SP - 658
EP - 661
BT - 2008 IEEE Sensors, SENSORS 2008
T2 - 2008 IEEE Sensors, SENSORS 2008
Y2 - 26 October 2008 through 29 October 2009
ER -