@inproceedings{cfb04b6047ac4c5bb7f397c932c8e369,
title = "Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain",
abstract = "Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ∼2X drain current enhancement by the 1% uniaxial tensile strain.",
keywords = "MOSFET, nanowire, silicon, uniaxial strain",
author = "Takahisa Tanaka and Itoh, {Kohei M.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 ; Conference date: 09-09-2014 Through 11-09-2014",
year = "2014",
month = oct,
day = "20",
doi = "10.1109/SISPAD.2014.6931605",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "229--232",
booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
}