Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

Aleksei A. Kononov; Rene A. Castro; Diana D. Glavnaya; Nadezhda I. Anisimova; Gennady A. Bordovsky; Alexander V. Kolobov; Yuta Saito; Paul Fons

doi:10.1002/pssb.202000114

Dielectric Relaxation and Charge Transfer in Amorphous MoS₂ Thin Films

Aleksei A. Kononov, Rene A. Castro, Diana D. Glavnaya, Nadezhda I. Anisimova, Gennady A. Bordovsky, Alexander V. Kolobov, Yuta Saito, Paul Fons

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS₂ using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process E_a and conductivity E_σ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

Original language	English
Article number	2000114
Journal	Physica Status Solidi (B) Basic Research
Volume	257
Issue number	11
DOIs	https://doi.org/10.1002/pssb.202000114
Publication status	Published - 2020 Nov
Externally published	Yes

Keywords

molybdenum disulfide
transfer processes
transition metal dichalcogenides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.202000114

Cite this

@article{afd43fd523814872a58073c22597352b,

title = "Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films",

abstract = "The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.",

keywords = "molybdenum disulfide, transfer processes, transition metal dichalcogenides",

author = "Kononov, {Aleksei A.} and Castro, {Rene A.} and Glavnaya, {Diana D.} and Anisimova, {Nadezhda I.} and Bordovsky, {Gennady A.} and Kolobov, {Alexander V.} and Yuta Saito and Paul Fons",

note = "Funding Information: This reported study was funded by RFBR, the project number 19‐07‐00353 A. Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

year = "2020",

month = nov,

doi = "10.1002/pssb.202000114",

language = "English",

volume = "257",

journal = "Physica Status Solidi (B) Basic Research",

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T1 - Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

AU - Kononov, Aleksei A.

AU - Castro, Rene A.

AU - Glavnaya, Diana D.

AU - Anisimova, Nadezhda I.

AU - Bordovsky, Gennady A.

AU - Kolobov, Alexander V.

AU - Saito, Yuta

AU - Fons, Paul

PY - 2020/11

Y1 - 2020/11

N2 - The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

AB - The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

KW - molybdenum disulfide

KW - transfer processes

KW - transition metal dichalcogenides

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