Dielectric relaxation in thin layers of amorphous and crystalline GeSb2Te4 was studied. A relaxation process associated with the manifestation of dipole-relaxation polarization is found. The appearance of dipoles is thought to be caused by the off-center location of Ge and Sb in cubic fragments of GeSb2Te4. The activation energies for relaxation processes were calculated to be Ea≈0.34 eV for amorphous and EC≈0.47 eV for crystalline GeSb2Te4.
|Title of host publication
|Proceedings of the XV International Conference "Physics of Dielectrics"
|Yuriy Gorokhovatsky, Dmitry Temnov, Viktoria Kapralova, Nicolay Sudar, Elena Velichko
|American Institute of Physics Inc.
|Published - 2020 Dec 1
|15th International Conference on Physics of Dielectrics, Dielectrics 2020 - St. Petersburg, Russian Federation
Duration: 2020 Oct 5 → 2020 Oct 8
|AIP Conference Proceedings
|15th International Conference on Physics of Dielectrics, Dielectrics 2020
|20/10/5 → 20/10/8
ASJC Scopus subject areas
- General Physics and Astronomy