Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

K. Matsuda; T. Matsumoto; H. Saito; K. Nishi; T. Saiki

doi:10.1016/S1386-9477(99)00345-8

Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

K. Matsuda, T. Matsumoto, H. Saito, K. Nishi, T. Saiki

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We study the variations of optical properties of self-assembled In_0.5Ga_0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

Original language	English
Pages (from-to)	377-382
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(99)00345-8
Publication status	Published - 2000 May
Externally published	Yes
Event	MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: 1999 Jul 12 → 1999 Jul 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(99)00345-8

Cite this

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title = "Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope",

abstract = "We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.",

author = "K. Matsuda and T. Matsumoto and H. Saito and K. Nishi and T. Saiki",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

AU - Matsuda, K.

AU - Matsumoto, T.

AU - Saito, H.

AU - Nishi, K.

AU - Saiki, T.

PY - 2000/5

Y1 - 2000/5

N2 - We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

AB - We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

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DO - 10.1016/S1386-9477(99)00345-8

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EP - 382

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures

Y2 - 12 July 1999 through 16 July 1999

ER -

Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

Abstract

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