Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux; I. C. Robin; J. Bonaimé; B. Hyot; A. V. Kolobov; K. V. Mitrofanov; P. Fons; J. Tominaga; Y. Tamenori; G. Feuillet

doi:10.1063/1.4876228

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux, I. C. Robin, J. Bonaimé, B. Hyot, A. V. Kolobov, K. V. Mitrofanov, P. Fons, J. Tominaga, Y. Tamenori, G. Feuillet

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

Original language	English
Article number	194302
Journal	Journal of Applied Physics
Volume	115
Issue number	19
DOIs	https://doi.org/10.1063/1.4876228
Publication status	Published - 2014 May 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4876228

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abstract = "In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.",

author = "A. Bocheux and Robin, {I. C.} and J. Bonaim{\'e} and B. Hyot and Kolobov, {A. V.} and Mitrofanov, {K. V.} and P. Fons and J. Tominaga and Y. Tamenori and G. Feuillet",

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T1 - Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

AU - Bocheux, A.

AU - Robin, I. C.

AU - Bonaimé, J.

AU - Hyot, B.

AU - Kolobov, A. V.

AU - Mitrofanov, K. V.

AU - Fons, P.

AU - Tominaga, J.

AU - Tamenori, Y.

AU - Feuillet, G.

PY - 2014/5/21

Y1 - 2014/5/21

N2 - In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

AB - In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

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DO - 10.1063/1.4876228

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 19

M1 - 194302

ER -

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

Abstract

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