Dynamical properties of impurity clusters in silicon

J. Yamauchi; N. Aoki; I. Mizushima

doi:10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T

Dynamical properties of impurity clusters in silicon

J. Yamauchi, N. Aoki, I. Mizushima

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Dynamical properties of several configurations of B₁₂ clusters in Si crystal are studied by means of the first-principles calculations. The cubo-octahedral B₁₂ cluster in Si is found to be unstable against infinitesimal displacement, decaying into an icosahedral B₁₂ cluster or a novel B₁₂ cluster with S₄ symmetry. The calculated infrared absorption active modes of the icosahedral B₁₂ cluster in Si are in reasonable agreement with the experimental results, which strongly suggests the existence of the icosahedral B₁₂ cluster in Si after heavily dosed B ion implantation.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	210
Issue number	2
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T
Publication status	Published - 1998 Dec
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T

Cite this

@article{5c90504fdc1e4ff8b0b01ca14505a39b,

title = "Dynamical properties of impurity clusters in silicon",

abstract = "Dynamical properties of several configurations of B12 clusters in Si crystal are studied by means of the first-principles calculations. The cubo-octahedral B12 cluster in Si is found to be unstable against infinitesimal displacement, decaying into an icosahedral B12 cluster or a novel B12 cluster with S4 symmetry. The calculated infrared absorption active modes of the icosahedral B12 cluster in Si are in reasonable agreement with the experimental results, which strongly suggests the existence of the icosahedral B12 cluster in Si after heavily dosed B ion implantation.",

author = "J. Yamauchi and N. Aoki and I. Mizushima",

year = "1998",

month = dec,

doi = "10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T",

language = "English",

volume = "210",

pages = "273--276",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Dynamical properties of impurity clusters in silicon

AU - Yamauchi, J.

AU - Aoki, N.

AU - Mizushima, I.

PY - 1998/12

Y1 - 1998/12

N2 - Dynamical properties of several configurations of B12 clusters in Si crystal are studied by means of the first-principles calculations. The cubo-octahedral B12 cluster in Si is found to be unstable against infinitesimal displacement, decaying into an icosahedral B12 cluster or a novel B12 cluster with S4 symmetry. The calculated infrared absorption active modes of the icosahedral B12 cluster in Si are in reasonable agreement with the experimental results, which strongly suggests the existence of the icosahedral B12 cluster in Si after heavily dosed B ion implantation.

AB - Dynamical properties of several configurations of B12 clusters in Si crystal are studied by means of the first-principles calculations. The cubo-octahedral B12 cluster in Si is found to be unstable against infinitesimal displacement, decaying into an icosahedral B12 cluster or a novel B12 cluster with S4 symmetry. The calculated infrared absorption active modes of the icosahedral B12 cluster in Si are in reasonable agreement with the experimental results, which strongly suggests the existence of the icosahedral B12 cluster in Si after heavily dosed B ion implantation.

UR - http://www.scopus.com/inward/record.url?scp=0032279211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032279211&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T

DO - 10.1002/(SICI)1521-3951(199812)210:2<273::AID-PSSB273>3.0.CO;2-T

M3 - Article

AN - SCOPUS:0032279211

SN - 0370-1972

VL - 210

SP - 273

EP - 276

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 2

ER -

Dynamical properties of impurity clusters in silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this