TY - JOUR
T1 - Effect of metal side claddings on emission decay rates of single quantum dots embedded in a sub-wavelength semiconductor waveguide
AU - Yamamoto, Takumi
AU - Ota, Yasutomo
AU - Ishida, Satomi
AU - Kumagai, Naoto
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Funding Information:
Acknowledgments The authors thank R. Ohta and E. Harbord for their technical support and fruitful discussions. They also thank M. Holmes for his critical reading. This work was supported by Project for Developing Innovation Systems of MEXT, NEDO project, and JSPS KAKENHI Grant-in-Aid for Specially Promoted Research 15H05700.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/8
Y1 - 2016/8
N2 - We experimentally investigate the emission decay rates of self-assembled single InAs quantum dots (QDs) embedded in sub-wavelength semiconductor waveguides with and without metal side claddings. Compared with as-grown single QDs, we observe a clear suppression (enhancement) in the radiative decay rates of single InAs QDs embedded in the sub-wavelength semiconductor waveguides without (with) metal cladding, respectively. The decay rate for QDs in metal-clad waveguides is >2 times faster than that in waveguides without metal. Numerical calculations using models that include the effects of structural imperfections show good agreement with the experimental results, and reveal that the most important structural imperfection is the gap between the metal and the semiconductor.
AB - We experimentally investigate the emission decay rates of self-assembled single InAs quantum dots (QDs) embedded in sub-wavelength semiconductor waveguides with and without metal side claddings. Compared with as-grown single QDs, we observe a clear suppression (enhancement) in the radiative decay rates of single InAs QDs embedded in the sub-wavelength semiconductor waveguides without (with) metal cladding, respectively. The decay rate for QDs in metal-clad waveguides is >2 times faster than that in waveguides without metal. Numerical calculations using models that include the effects of structural imperfections show good agreement with the experimental results, and reveal that the most important structural imperfection is the gap between the metal and the semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=84989345466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84989345466&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.08RC02
DO - 10.7567/JJAP.55.08RC02
M3 - Article
AN - SCOPUS:84989345466
SN - 0021-4922
VL - 55
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 8
M1 - 08RC02
ER -