Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures

D. J. Tweet; H. Matsuhata; P. Fons; H. Oyanagi; H. Kamei

doi:10.1063/1.119187

Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures

D. J. Tweet, H. Matsuhata, P. Fons, H. Oyanagi, H. Kamei

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We present evidence for anomalously large, strain-dependent interdiffusion in InAs_1-xP_x layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.

Original language	English
Pages (from-to)	3410-3412
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	25
DOIs	https://doi.org/10.1063/1.119187
Publication status	Published - 1997 Jun 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.119187

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title = "Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures",

abstract = "We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a {"}critical strain:{"} if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.",

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T1 - Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures

AU - Tweet, D. J.

AU - Matsuhata, H.

AU - Fons, P.

AU - Oyanagi, H.

AU - Kamei, H.

PY - 1997/6/23

Y1 - 1997/6/23

N2 - We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.

AB - We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

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Effect of strain and temperature on anomalously large interdiffusion in InAsP/lnP heterostructures

Abstract

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