Effects of air annealing on CuInSe2 thin films grown by molecular beam epitaxy

I. Kim; S. Niki; P. J. Fons; T. Kurafuji; M. Okutomi; A. Yamada

Effects of air annealing on CuInSe₂ thin films grown by molecular beam epitaxy

I. Kim, S. Niki, P. J. Fons, T. Kurafuji, M. Okutomi, A. Yamada

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality epitaxial CuInSe₂ (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of T_A = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In₂O₃. This is consistent with equilibrium thermodynamic calculations which indicate that In₂O₃ is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

Original language	English
Pages (from-to)	261-266
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	426
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{0f810d44eeae410cad1b7b532318c867,

title = "Effects of air annealing on CuInSe2 thin films grown by molecular beam epitaxy",

abstract = "High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.",

author = "I. Kim and S. Niki and Fons, {P. J.} and T. Kurafuji and M. Okutomi and A. Yamada",

year = "1996",

language = "English",

volume = "426",

pages = "261--266",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Effects of air annealing on CuInSe2 thin films grown by molecular beam epitaxy

AU - Kim, I.

AU - Niki, S.

AU - Fons, P. J.

AU - Kurafuji, T.

AU - Okutomi, M.

AU - Yamada, A.

PY - 1996

Y1 - 1996

N2 - High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

AB - High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

UR - http://www.scopus.com/inward/record.url?scp=0030380002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030380002&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030380002

SN - 0272-9172

VL - 426

SP - 261

EP - 266

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Effects of air annealing on CuInSe₂ thin films grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this