Effects of air annealing on CuInSe2 thin films grown by molecular beam epitaxy

I. Kim, S. Niki, P. J. Fons, T. Kurafuji, M. Okutomi, A. Yamada

Research output: Contribution to journalConference articlepeer-review


High quality epitaxial CuInSe2 (CIS) films with a range of Cu/In ratios (γ) = 0.80 to approximately 2.24 grown by molecular beam epitaxy (MBE) have been post-annealed at temperatures of TA = 200 to approximately 400 °C in both dry-air and Ar atmospheres. Changes in the structure and composition due to annealing have been investigated. The only oxide observed experimentally for both the In-rich, and the Cu-rich CIS films was In2O3. This is consistent with equilibrium thermodynamic calculations which indicate that In2O3 is the most stable solid oxide phase. During annealing some reactions are probably kinetically limited making the annealing process a function of time and temperature, but the equilibrium thermodynamic results reported here simplify interpretation of phase space.

Original languageEnglish
Pages (from-to)261-266
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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