Effects of annealing on CuInSe₂ films grown by molecular beam epitaxy

Keyphrases

• Annealing 100%
• Molecular Beam Epitaxy 100%
• Annealing Effect 100%
• CuInSe2 Film 100%
• Indium Oxide 66%
• Vacuum Annealing 66%
• Overlapping Peaks 66%
• Photoluminescence Spectra 33%
• Gallium Arsenide 33%
• Substrate Temperature 33%
• Annealing Temperature 33%
• Shallow Donor 33%
• Conduction Band 33%
• Annealing Process 33%
• Dry Air 33%
• Donor Type 33%
• Recombination Mechanism 33%
• Stable Phase 33%
• Epitaxially Grown 33%
• Radiative Recombination 33%
• Thermodynamic Calculation 33%
• Excitation Power Dependence 33%
• In-rich 33%
• Emission Peak 33%
• Molar Fraction 33%
• Oxygen Fraction 33%
• N-systems 33%
• Ar Atmosphere 33%
• Donor-acceptor Pair 33%
• CuInS2 Thin Films 33%
• Cu-rich 33%
• Se Vacancy 33%
• CuInS 33%

Material Science

• Film 100%
• Annealing 100%
• Molecular Beam Epitaxy 100%
• Protective Atmosphere 50%
• Thin Films 25%
• Photoluminescence 25%
• Gallium Arsenide 25%
• Tennessine 25%
• Annealing Temperature 25%

Physics

• Molecular Beam Epitaxy 100%
• Protective Atmosphere 100%
• Thin Films 50%
• Conduction Band 50%
• Red Shift 50%
• Photoluminescence 50%
• Thermodynamics 50%