Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs

P. Fons; Yunosuke Makita; Shinji Kimura; Tsutomu Iida; Akimasa Yamada; Hajime Shibata; Akira Obara; Yushin Tsai; Shin Ichiro Uekusa

Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs

P. Fons, Yunosuke Makita, Shinji Kimura, Tsutomu Iida, Akimasa Yamada, Hajime Shibata, Akira Obara, Yushin Tsai, Shin Ichiro Uekusa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The structural effects of low-energy (30-500 eV), mass separated C¹² Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2 K photoluminesence measurements for GaAs epitaxy temperatures of 550°C. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at E_Ion = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm² - 45 nA/cm²) and growth temperatures of 550 and 550 °C, show LO Raman peak broadening and mode hardening for currents ≥ 15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.

Original language	English
Title of host publication	Materials Synthesis and Processing Using Ion Beams
Editors	Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Publisher	Publ by Materials Research Society
Pages	1011-1016
Number of pages	6
ISBN (Print)	1558992154
Publication status	Published - 1994 Jan 1
Externally published	Yes
Event	Proceedings of the MRS 1993 Fall Meeting - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 3

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	316
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS 1993 Fall Meeting
City	Boston, MA, USA
Period	93/11/29 → 93/12/3

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Fons, P., Makita, Y., Kimura, S., Iida, T., Yamada, A., Shibata, H., Obara, A., Tsai, Y., & Uekusa, S. I. (1994). Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs. In A. F. Garito, A. K.-Y. Jen, C. Y.-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 1011-1016). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.

Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs. / Fons, P.; Makita, Yunosuke; Kimura, Shinji et al.
Materials Synthesis and Processing Using Ion Beams. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Publ by Materials Research Society, 1994. p. 1011-1016 (Materials Research Society Symposium Proceedings; Vol. 316).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fons, P, Makita, Y, Kimura, S, Iida, T, Yamada, A, Shibata, H, Obara, A, Tsai, Y & Uekusa, SI 1994, Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Synthesis and Processing Using Ion Beams. Materials Research Society Symposium Proceedings, vol. 316, Publ by Materials Research Society, pp. 1011-1016, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 93/11/29.

Fons, P. ; Makita, Yunosuke ; Kimura, Shinji et al. / Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs. Materials Synthesis and Processing Using Ion Beams. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Publ by Materials Research Society, 1994. pp. 1011-1016 (Materials Research Society Symposium Proceedings).

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title = "Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs",

abstract = "The structural effects of low-energy (30-500 eV), mass separated C12 Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2 K photoluminesence measurements for GaAs epitaxy temperatures of 550°C. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at EIon = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm2 - 45 nA/cm2) and growth temperatures of 550 and 550 °C, show LO Raman peak broadening and mode hardening for currents ≥ 15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.",

author = "P. Fons and Yunosuke Makita and Shinji Kimura and Tsutomu Iida and Akimasa Yamada and Hajime Shibata and Akira Obara and Yushin Tsai and Uekusa, {Shin Ichiro}",

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AU - Fons, P.

AU - Makita, Yunosuke

AU - Kimura, Shinji

AU - Iida, Tsutomu

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Obara, Akira

AU - Tsai, Yushin

AU - Uekusa, Shin Ichiro

PY - 1994/1/1

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N2 - The structural effects of low-energy (30-500 eV), mass separated C12 Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2 K photoluminesence measurements for GaAs epitaxy temperatures of 550°C. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at EIon = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm2 - 45 nA/cm2) and growth temperatures of 550 and 550 °C, show LO Raman peak broadening and mode hardening for currents ≥ 15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.

AB - The structural effects of low-energy (30-500 eV), mass separated C12 Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2 K photoluminesence measurements for GaAs epitaxy temperatures of 550°C. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at EIon = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm2 - 45 nA/cm2) and growth temperatures of 550 and 550 °C, show LO Raman peak broadening and mode hardening for currents ≥ 15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.

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ER -

Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs

Abstract

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