Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli, Shi Yi, Gu Shulin, Zhu Jianmin, Zheng Youdou, Saito Kenichi, Ishikuro Hiroki, Hiramoto Toshiro

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

Original languageEnglish
Pages (from-to)189-193
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2
Publication statusPublished - 2000 Aug
Externally publishedYes
EventIUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials - Beijing, China
Duration: 1999 Jun 131999 Jun 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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