Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

Shinobu Fujihara; Chikako Sasaki; Toshio Kimura

doi:10.1016/S0955-2219(01)00182-0

Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

Shinobu Fujihara, Chikako Sasaki, Toshio Kimura

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

151 Citations (Scopus)

Abstract

Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500°C for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn_0.85Li_0.10Mg_0.05O showed the lowest current density of 1.7 × 10^-6 A cm^-2 in the present study.

Original language	English
Pages (from-to)	2109-2112
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	21
Issue number	10-11
DOIs	https://doi.org/10.1016/S0955-2219(01)00182-0
Publication status	Published - 2001 Aug 31

Keywords

Electrical properties
Films
Grains growth
Sol-gel processes
ZnO

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1016/S0955-2219(01)00182-0

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title = "Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films",

abstract = "Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500°C for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 × 10-6 A cm-2 in the present study.",

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T1 - Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

AU - Fujihara, Shinobu

AU - Sasaki, Chikako

AU - Kimura, Toshio

PY - 2001/8/31

Y1 - 2001/8/31

N2 - Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500°C for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 × 10-6 A cm-2 in the present study.

AB - Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500°C for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 × 10-6 A cm-2 in the present study.

KW - Electrical properties

KW - Films

KW - Grains growth

KW - Sol-gel processes

KW - ZnO

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Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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