Abstract
The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.
Original language | English |
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Title of host publication | Institute of Physics Conference Series |
Editors | B. de Cremoux |
Pages | 515-520 |
Number of pages | 6 |
Edition | 74 |
Publication status | Published - 1985 Dec 1 |
Externally published | Yes |
Publication series
Name | Institute of Physics Conference Series |
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Number | 74 |
ISSN (Print) | 0373-0751 |
ASJC Scopus subject areas
- General Physics and Astronomy