Effects of strain on the growth and properties of CuInSe2 epitaxial films

S. Niki, P. J. Fons, H. Shibata, T. Kurafuji, A. Yamada, Y. Okada, H. Oyanagi, W. G. Bi, C. W. Tu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


CuInSe2 films have been grown on both GaAs(0 0 1) and In0.29Ga0.71As pseudo-lattice-matched substrates by solid-source molecular beam epitaxy and the effects of strain on the properties of epitaxial films have been investigated. For CuInSe2 epitaxial films grown on GaAs(0 0 1), the intensities of excitonic emissions become stronger and the line widths of the predominant defect-related emissions become smaller on increasing the thickness of the films from 0.4 to 2 μm, suggesting that the defect density decreases with the film thickness. Drastic improvements in optical and transport properties have been achieved by using In0.29Ga0.71As pseudo-lattice-matched substrates; free-exciton emissions were predominantly observed, indicating that high-quality CuInSe2 epitaxial films have been grown by controlling the misfit strain between the substrates and the epitaxial films.

Original languageEnglish
Pages (from-to)1051-1056
Number of pages6
JournalJournal of Crystal Growth
Issue numberPART 2
Publication statusPublished - 1997 May
Externally publishedYes


  • CuInSe
  • Molecualr beam epitaxy
  • Photoluminescence
  • Transmission electron microscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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