Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)

Jiro Kato; Kohei M. Itoh; Eugene E. Haller

doi:10.1016/S0921-4526(01)00398-2

Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration N_I = 2.2 × 10¹³-2.6 × 10¹⁴ cm^-3. Absorption peaks corresponding to 1s-2p_± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against N_I changes at N_I ≈ 8 × 10¹³ cm^-3 due to the transition of ionized impurity distribution from random (N_I < 8 × 10¹³ cm^-3) to correlated (N_I 8 × 10¹³ cm^-3).

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	302-303
DOIs	https://doi.org/10.1016/S0921-4526(01)00398-2
Publication status	Published - 2001 Jun 30
Event	Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan Duration: 2000 Sept 24 → 2000 Sept 27

Keywords

Compensated semiconductors
Impurity absorption
Impurity distribution

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00398-2

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@article{d389033d43334744837504a063719d55,

title = "Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)",

abstract = "We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).",

keywords = "Compensated semiconductors, Impurity absorption, Impurity distribution",

author = "Jiro Kato and Itoh, {Kohei M.} and Haller, {Eugene E.}",

year = "2001",

month = jun,

day = "30",

doi = "10.1016/S0921-4526(01)00398-2",

language = "English",

volume = "302-303",

pages = "1--6",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors ; Conference date: 24-09-2000 Through 27-09-2000",

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TY - JOUR

T1 - Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)

AU - Kato, Jiro

AU - Itoh, Kohei M.

AU - Haller, Eugene E.

PY - 2001/6/30

Y1 - 2001/6/30

N2 - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

AB - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

KW - Compensated semiconductors

KW - Impurity absorption

KW - Impurity distribution

UR - http://www.scopus.com/inward/record.url?scp=0034972972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034972972&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00398-2

DO - 10.1016/S0921-4526(01)00398-2

M3 - Conference article

AN - SCOPUS:0034972972

SN - 0921-4526

VL - 302-303

SP - 1

EP - 6

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors

Y2 - 24 September 2000 through 27 September 2000

ER -

Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)

Abstract

Keywords

ASJC Scopus subject areas

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