TY - JOUR
T1 - Electrical and thermal transport of layered bismuth-sulfide EuBiS2F at temperatures between 300 and 623 K
AU - Goto, Yosuke
AU - Kajitani, Joe
AU - Mizuguchi, Yoshikazu
AU - Kamihara, Yoichi
AU - Matoba, Masanori
N1 - Publisher Copyright:
©2015 The Physical Society of Japan.
PY - 2015/8/15
Y1 - 2015/8/15
N2 - We demonstrate the electrical and thermal transport of the layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to that of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to the heavier atomic mass of Eu ions than that of Sr ions.
AB - We demonstrate the electrical and thermal transport of the layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to that of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to the heavier atomic mass of Eu ions than that of Sr ions.
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U2 - 10.7566/JPSJ.84.085003
DO - 10.7566/JPSJ.84.085003
M3 - Article
AN - SCOPUS:84938833129
SN - 0031-9015
VL - 84
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 8
M1 - 085003
ER -