Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films

Junji Tominaga, Robert E. Simpson, Paul Fons, Alexander V. Kolobov

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb2Te3 superlattice, an extraordinarily large magnetoresistance of R/R 2000 can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage.

Original languageEnglish
Article number152105
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2011 Oct 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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