Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films

Junji Tominaga; Robert E. Simpson; Paul Fons; Alexander V. Kolobov

doi:10.1063/1.3651275

Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films

Junji Tominaga, Robert E. Simpson, Paul Fons, Alexander V. Kolobov

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

Phase-change GeTe/Sb₂Te₃ multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb₂Te₃ superlattice, an extraordinarily large magnetoresistance of R/R 2000 can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage.

Original language	English
Article number	152105
Journal	Applied Physics Letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1063/1.3651275
Publication status	Published - 2011 Oct 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3651275

Cite this

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abstract = "Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb2Te3 superlattice, an extraordinarily large magnetoresistance of R/R 2000 can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage.",

author = "Junji Tominaga and Simpson, {Robert E.} and Paul Fons and Kolobov, {Alexander V.}",

note = "Funding Information: This research was funded by the Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative RD on Science and Technology (FIRST Program), initiated by the Council for Science and Technology Policy (CSTP). We thank Elpida Memory, Inc. for discussions on the device measurements and Ms. R. Kondo for her assistance in device fabrication.",

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AU - Tominaga, Junji

AU - Simpson, Robert E.

AU - Fons, Paul

AU - Kolobov, Alexander V.

N1 - Funding Information: This research was funded by the Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative RD on Science and Technology (FIRST Program), initiated by the Council for Science and Technology Policy (CSTP). We thank Elpida Memory, Inc. for discussions on the device measurements and Ms. R. Kondo for her assistance in device fabrication.

PY - 2011/10/10

Y1 - 2011/10/10

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AB - Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb2Te3 superlattice, an extraordinarily large magnetoresistance of R/R 2000 can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage.

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Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films

Abstract

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