Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process

Mizuhisa Nihei; Takashi Hyakushima; Shintaro Sato; Tatsuhiro Nozue; Masaaki Norimatsu; Miho Mishima; Tomo Murakami; Daiyu Kondo; Akio Kawabata; Mari Ohfuti; Yuji Awano

Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process

Mizuhisa Nihei, Takashi Hyakushima, Shintaro Sato, Tatsuhiro Nozue, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Akio Kawabata, Mari Ohfuti, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

38 Citations (Scopus)

Abstract

We studied the electrical properties of a carbon nanotube (CNT) via interconnect fabricated by a novel damascene process which is mostly compatible with conventional Cu interconnects. It was found that the resistance of 60-nm-height vias was independent of temperatures as high as 423K, which suggests that the carrier transport is ballistic. The obtained resistance of 0.05 Ω for 2.8-um-diameter vias is the lowest value ever reported. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for 32-nm technology node (year 2013). This indicates that it will be possible to realize CNT vias with ballistic transport for 32-nm technology node and below.

Original language	English
Title of host publication	Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers
Pages	204-206
Number of pages	3
Publication status	Published - 2007 Oct 2
Externally published	Yes
Event	IEEE 2007 International Interconnect Technology Conference, IITC - Burlingame, CA, United States Duration: 2007 Jun 4 → 2007 Jun 6

Publication series

Name	Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Other

Other	IEEE 2007 International Interconnect Technology Conference, IITC
Country/Territory	United States
City	Burlingame, CA
Period	07/6/4 → 07/6/6

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Nihei, M., Hyakushima, T., Sato, S., Nozue, T., Norimatsu, M., Mishima, M., Murakami, T., Kondo, D., Kawabata, A., Ohfuti, M., & Awano, Y. (2007). Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. In Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers (pp. 204-206). [4263702] (Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers).

Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. / Nihei, Mizuhisa; Hyakushima, Takashi; Sato, Shintaro et al.
Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. p. 204-206 4263702 (Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nihei, M, Hyakushima, T, Sato, S, Nozue, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Kawabata, A, Ohfuti, M & Awano, Y 2007, Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. in Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers., 4263702, Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers, pp. 204-206, IEEE 2007 International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 07/6/4.

Nihei M, Hyakushima T, Sato S, Nozue T, Norimatsu M, Mishima M et al. Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. In Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. p. 204-206. 4263702. (Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers).

Nihei, Mizuhisa ; Hyakushima, Takashi ; Sato, Shintaro et al. / Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. pp. 204-206 (Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers).

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abstract = "We studied the electrical properties of a carbon nanotube (CNT) via interconnect fabricated by a novel damascene process which is mostly compatible with conventional Cu interconnects. It was found that the resistance of 60-nm-height vias was independent of temperatures as high as 423K, which suggests that the carrier transport is ballistic. The obtained resistance of 0.05 Ω for 2.8-um-diameter vias is the lowest value ever reported. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for 32-nm technology node (year 2013). This indicates that it will be possible to realize CNT vias with ballistic transport for 32-nm technology node and below.",

author = "Mizuhisa Nihei and Takashi Hyakushima and Shintaro Sato and Tatsuhiro Nozue and Masaaki Norimatsu and Miho Mishima and Tomo Murakami and Daiyu Kondo and Akio Kawabata and Mari Ohfuti and Yuji Awano",

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AU - Nihei, Mizuhisa

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AU - Norimatsu, Masaaki

AU - Mishima, Miho

AU - Murakami, Tomo

AU - Kondo, Daiyu

AU - Kawabata, Akio

AU - Ohfuti, Mari

AU - Awano, Yuji

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AB - We studied the electrical properties of a carbon nanotube (CNT) via interconnect fabricated by a novel damascene process which is mostly compatible with conventional Cu interconnects. It was found that the resistance of 60-nm-height vias was independent of temperatures as high as 423K, which suggests that the carrier transport is ballistic. The obtained resistance of 0.05 Ω for 2.8-um-diameter vias is the lowest value ever reported. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for 32-nm technology node (year 2013). This indicates that it will be possible to realize CNT vias with ballistic transport for 32-nm technology node and below.

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Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process

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