Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects

Daisuke Yokoyama; Takayuki Iwasaki; Kentaro Ishimaru; Shintaro Sato; Takashi Hyakushima; Mizuhisa Nihei; Yuji Awano; Hiroshi Kawarada

doi:10.1143/JJAP.47.1985

Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects

Daisuke Yokoyama, Takayuki Iwasaki, Kentaro Ishimaru, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano, Hiroshi Kawarada

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

Original language	English
Pages (from-to)	1985-1990
Number of pages	6
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.1985
Publication status	Published - 2008 Apr 18
Externally published	Yes

Keywords

Carbon nanotube
Chemical mechanical polishing
Chemical vapor deposition
Interconnect
LSI
Low-temperature growth
Radical
Via

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.1985

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title = "Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects",

abstract = "We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.",

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AU - Yokoyama, Daisuke

AU - Iwasaki, Takayuki

AU - Ishimaru, Kentaro

AU - Sato, Shintaro

AU - Hyakushima, Takashi

AU - Nihei, Mizuhisa

AU - Awano, Yuji

AU - Kawarada, Hiroshi

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N2 - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

AB - We measured the electrical properties of vertically aligned carbon nanotubes (CNTs) synthesized from via holes by radical chemical vapor deposition at a low temperature of 390°C, which meets the requirements of the Si large scale integration (LSI) process. To use the CNTs could be used for LSI wiring, we applied chemical mechanical polishing (CMP) to the CNTs and successfully reduced the via resistance by a factor often. In addition, the resistance of the CNTs was reduced further to 0.6 Ω for 2-μm-diameter vias by annealing at 400°C. Although the temperature dependence of the resistance of the CNTs grown in vias (CNT-vias) did not indicate ballistic transport, which is one of the expected properties of CNTs, we found that CMP and annealing are effective for reducing the via resistance of CNTs.

KW - Carbon nanotube

KW - Chemical mechanical polishing

KW - Chemical vapor deposition

KW - Interconnect

KW - LSI

KW - Low-temperature growth

KW - Radical

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JF - Japanese journal of applied physics

IS - 4 PART 1

ER -

Electrical properties of carbon nanotubes grown at a low temperature for use as interconnects

Abstract

Keywords

ASJC Scopus subject areas

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