Electrically induced conductivity switching in sputtered Fe 3O4 thin film

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

Research output: Contribution to journalArticlepeer-review


Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Issue number2
Publication statusPublished - 2004 Sept 1
Externally publishedYes


  • Electron transport
  • Spintronics
  • Thin film FeO
  • Verwey transition

ASJC Scopus subject areas

  • General Computer Science
  • Electrical and Electronic Engineering


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