Electrically tunable InAs/GaAs QD in a nanocavity with a transfer-printed ITO electrode

We demonstrate the electrical tuning of InAs/GaAs quantum dots (QDs) embedded in a photonic-crystal (PhC) cavity with transparent indium tin oxide (ITO) electrodes hybridintegrated by transfer printing. The design includes spacer layers between the cavity and the electrodes to reduce absorption loss while still maintaining a significant bias field. The bottom electrode, PhC cavity, and top electrode were fabricated independently and integrated by transfer printing, and an electrical connection was made by inkjet printing, both implemented locally without affecting the entire chip. We observed the electrical tuning of QD emissions into the cavity mode and Purcell enhancement. This work paves the way for utilizing multiple hybrid-integrated QDs on the same chip.