Electron-spin phase relaxation of phosphorus donors in nuclear-spin- enriched silicon

Eisuke Abe, Kohei M. Itoh, Junichi Isoya, Satoshi Yamasaki

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)


We report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K, The two-pulse echo decay curves for both samples show quadratic dependence on time, and the electron phase relaxation time TM for 29Si is about an order of magnitude shorter than that for natSi. The orientation dependence of TM demonstrates that the phase relaxation is caused by spectral diffusion due to flip-flops of the host nuclear spins. The electron spin echo envelope modulation effects in 29Si are analyzed in the frequency domain.

Original languageEnglish
Article number033204
Pages (from-to)033204-1-033204-4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
Publication statusPublished - 2004 Jul

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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