@article{2c9d53b5d64943f2a62eb3b51cdf051a,
title = "Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices",
abstract = "We analyze the electron spin relaxation rate 1/T1 of individual ion-implanted P31 donors in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures (T≈100 mK) as a function of external magnetic field B0 and donor electrochemical potential μD. We observe a magnetic field dependence of the form 1/T1B05 for B03 T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For B03T, the relaxation rate changes to 1/T1B0 for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where T1>1s, we also observe and quantify the spurious increase of 1/T1 when the electrochemical potential of the spin excited state |↑) comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to |↓). These results provide precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes.",
author = "Tenberg, {Stefanie B.} and Serwan Asaad and Madzik, {Mateusz T.} and Johnson, {Mark A.I.} and Benjamin Joecker and Arne Laucht and Hudson, {Fay E.} and Itoh, {Kohei M.} and Jakob, {A. Malwin} and Johnson, {Brett C.} and Jamieson, {David N.} and McCallum, {Jeffrey C.} and Dzurak, {Andrew S.} and Robert Joynt and Andrea Morello",
note = "Funding Information: We thank W. A. Coish and V. Premakumar for helpful discussion, and J. J. L. Morton for providing the bulk data point in Fig. 3 . The research at UNSW and U. Melbourne was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grants No. CE110001027 and No. CE170100012) and the US Army Research Office (Contracts No. W911NF-13-1-0024 and No. W911NF-17-1-0200). We acknowledge support from the Australian National Fabrication Facility (ANFF) and from the laboratory of R. Elliman at the Australian National University for the ion implantation facilities. K.M.I. acknowledges support from a Grant-in-Aid for Scientific Research by MEXT. The research of R.J. was sponsored by the Army Research Office (ARO) under Grants No. W911NF-17-1-0274 and No. W911NF-12-1-0607. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the US Government. The US Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein. Publisher Copyright: {\textcopyright} 2019 American Physical Society.",
year = "2019",
month = may,
day = "14",
doi = "10.1103/PhysRevB.99.205306",
language = "English",
volume = "99",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "20",
}