Electronic properties of silicon - M binary clusters (M = C & Na)

A. Nakajima; K. Nakao; M. Gomei; R. Kishi; S. Iwata; K. Kaya

Electronic properties of silicon - M binary clusters (M = C & Na)

A. Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata, K. Kaya

Research output: Contribution to journal › Conference article › peer-review

Abstract

Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the Si_nNa_m clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of Si_nNa and the electron affinity (EA) of Si_n is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

Original language	English
Pages (from-to)	61-66
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
Publication status	Published - 1995 Jan 1
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 1994 Nov 28 → 1994 Nov 30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electronic properties of silicon - M binary clusters (M = C & Na)",

abstract = "Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.",

author = "A. Nakajima and K. Nakao and M. Gomei and R. Kishi and S. Iwata and K. Kaya",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "358",

pages = "61--66",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

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TY - JOUR

T1 - Electronic properties of silicon - M binary clusters (M = C & Na)

AU - Nakajima, A.

AU - Nakao, K.

AU - Gomei, M.

AU - Kishi, R.

AU - Iwata, S.

AU - Kaya, K.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

AB - Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

UR - http://www.scopus.com/inward/record.url?scp=0029224512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029224512&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029224512

SN - 0272-9172

VL - 358

SP - 61

EP - 66

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Electronic properties of silicon - M binary clusters (M = C & Na)

Abstract

ASJC Scopus subject areas

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