TY - GEN
T1 - Electronic transport properties of strained Si thin films
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
AU - Yamauchi, Jun
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The effect of strain and layer thickness on the transport properties of < 100 >, < 111 >, and < 110 > confined Si thin films is systematically investigated using the density functional calculation. The strain is uniformly applied to the plane perpendicular to the confined direction and the lattice along the direction is relaxed. Anomalously heavy effective mass, which is more than ten times of the strain-free bulk value, is found in the case of the < 111 > confinement with relatively large strain. Similar results are obtained for the < 110 > case. These heavy masses are attributed to the bulk property, where the two electron pockets, whose center is located about 0.84 Γ-X in the non-strained case, merge into one pocket under the relatively large strain.
AB - The effect of strain and layer thickness on the transport properties of < 100 >, < 111 >, and < 110 > confined Si thin films is systematically investigated using the density functional calculation. The strain is uniformly applied to the plane perpendicular to the confined direction and the lattice along the direction is relaxed. Anomalously heavy effective mass, which is more than ten times of the strain-free bulk value, is found in the case of the < 111 > confinement with relatively large strain. Similar results are obtained for the < 110 > case. These heavy masses are attributed to the bulk property, where the two electron pockets, whose center is located about 0.84 Γ-X in the non-strained case, merge into one pocket under the relatively large strain.
KW - Band structure
KW - Density functional calculation
KW - Effective mass
KW - Electron pocket
KW - SOI
KW - Strained Si
UR - http://www.scopus.com/inward/record.url?scp=77958465804&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77958465804&partnerID=8YFLogxK
U2 - 10.1063/1.2730430
DO - 10.1063/1.2730430
M3 - Conference contribution
AN - SCOPUS:77958465804
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 1405
EP - 1406
BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Y2 - 24 July 2006 through 28 July 2006
ER -