Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Hiroyasu Nakayama; Jianting Ye; Takashi Ohtani; Yasunori Fujikawa; Kazuya Ando; Yoshihiro Iwasa; Eiji Saitoh

doi:10.1143/APEX.5.023002

Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Hiroyasu Nakayama, Jianting Ye, Takashi Ohtani, Yasunori Fujikawa, Kazuya Ando, Yoshihiro Iwasa, Eiji Saitoh

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm ^-1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.

Original language	English
Article number	023002
Journal	Applied Physics Express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1143/APEX.5.023002
Publication status	Published - 2012 Feb
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm -1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.",

author = "Hiroyasu Nakayama and Jianting Ye and Takashi Ohtani and Yasunori Fujikawa and Kazuya Ando and Yoshihiro Iwasa and Eiji Saitoh",

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T1 - Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

AU - Nakayama, Hiroyasu

AU - Ye, Jianting

AU - Ohtani, Takashi

AU - Fujikawa, Yasunori

AU - Ando, Kazuya

AU - Iwasa, Yoshihiro

AU - Saitoh, Eiji

PY - 2012/2

Y1 - 2012/2

N2 - Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm -1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.

AB - Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm -1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.

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Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Abstract

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