Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

M. Myronov; Y. Shiraki; T. Mouri; K. M. Itoh

doi:10.1063/1.2737396

Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

M. Myronov, Y. Shiraki, T. Mouri, K. M. Itoh

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7 Citations (Scopus)

Abstract

The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

Original language	English
Article number	192108
Journal	Applied Physics Letters
Volume	90
Issue number	19
DOIs	https://doi.org/10.1063/1.2737396
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping",

abstract = "The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.",

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note = "Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT 2002-2007 and JSPS funding for young researchers 18760019.",

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AU - Myronov, M.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT 2002-2007 and JSPS funding for young researchers 18760019.

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N2 - The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

AB - The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

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Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

Abstract

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