Enhancement of sensor response in graphene gas sensors by gate-induced field

Takahisa Tanaka; Takamune Yokoyama; Ken Uchida

doi:10.1109/LED.2018.2875892

Enhancement of sensor response in graphene gas sensors by gate-induced field

Takahisa Tanaka, Takamune Yokoyama, Ken Uchida

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.

Original language	English
Article number	8491313
Pages (from-to)	1924-1927
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	12
DOIs	https://doi.org/10.1109/LED.2018.2875892
Publication status	Published - 2018 Dec

Keywords

Gas sensors
gate-induced field
graphene
palladium
surface functionalization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2018.2875892

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title = "Enhancement of sensor response in graphene gas sensors by gate-induced field",

abstract = "The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.",

keywords = "Gas sensors, gate-induced field, graphene, palladium, surface functionalization",

author = "Takahisa Tanaka and Takamune Yokoyama and Ken Uchida",

note = "Funding Information: Manuscript received September 28, 2018; accepted October 10, 2018. Date of publication October 15, 2018; date of current version November 26, 2018. This work was supported by JST CREST under Grant JPMJCR1331. The review of this letter was arranged by Editor E. A. Guti{\'e}rrez-D. (Corresponding author: Ken Uchida.) The authors are with the Electronics and Electrical Engineering Department, Keio University, Yokohama 223-8522, Japan (e-mail: uchidak@elec.keio.ac.jp). Publisher Copyright: {\textcopyright} 2018 IEEE.",

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N2 - The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.

AB - The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.

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KW - gate-induced field

KW - graphene

KW - palladium

KW - surface functionalization

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Enhancement of sensor response in graphene gas sensors by gate-induced field

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Keywords

ASJC Scopus subject areas

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