Abstract
Epitaxial Ge 2Sb 2Te 5 thin layers were successfully grown in the metastable cubic phase on both slightly lattice-mismatched (GaSb) and highly lattice-mismatched (Si) templates. The higher quality of the films grown on (111)-oriented substrates is attributed to the tendency to form layered structures in the stable bulk phase as well as to the nature of distortion in the metastable cubic phase.
Original language | English |
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Pages (from-to) | 415-417 |
Number of pages | 3 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 6 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2012 Nov |
Externally published | Yes |
Keywords
- GIXRD
- Ge Sb Te
- HRTEM
- Molecular beam epitaxy
- RHEED
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics