Estimation of breakdown electric-field strength while reflecting local structures of SiO 2 gate dielectrics using first-principles molecular orbital calculation technique

Hiroshi Seki, Yasuhiro Shibuya, Daisuke Kobayashi, Hiroshi Nohira, Kenji Yasuoka, Kazuyuki Hirose

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

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Engineering & Materials Science

Physics & Astronomy