TY - JOUR
T1 - Evaluation of crack resistance of CrSiCN coatings as a function of Si concentration via nanoindentation
AU - Wang, Qianzhi
AU - Wu, Zhiwei
AU - Zhou, Fei
AU - Huang, Hu
AU - Niitsu, Keiichiro
AU - Yan, Jiwang
N1 - Funding Information:
This work has been initiated from a Japan–China joint research project and partially supported by a research grant in Keio University. This work has been supported by the National Natural Science Foundation of China (Grant No. 51375231 ), the Research Fund for the Doctoral Program of Higher Education (Grant No. 20133218110030 ), a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) , the Jiangsu Innovation Program for Graduate Education (Grant No. KYLX0234 ) and the Fundamental Research Funds for the Central Universities . We would like to acknowledge them for their financial support.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/6/25
Y1 - 2015/6/25
N2 - A series of CrSiCN coatings with various Si concentrations were deposited on Si(100) wafers, and the influence of Si content on the microstructure, mechanical property and crack resistance of the coatings was investigated by XRD, Raman spectroscopy and nanoindentation. After introducing (CH3)3SiH into precursor from 5sccm to 30sccm, the Si concentration increased from 0.97 at.% to 7.00 at.% with gradually increasing formation of amorphous SiCx and SiNx. Under low Si concentration (0.97-3.40 at.%) condition, solid solution effect and formation of nc-Cr(C,N)/a-SiNx(a-SiCx) architecture caused an increase in hardness from 18.1GPa to 21.3GPa. In contrast, at high Si concentration (5.35-7.00 at.%), larger grain separation, which resulted from the increase of a-SiNx(a-SiCx), led to a drop of hardness to a low range of 13.0-13.6 GPa and a decrease in compressive stress from 4.74 GPa to 2.78GPa. As a result, superior elasticity and high compressive stress prevented the CrSiCN (Si<3.40 at.%) coatings from radial crack, whereas the CrSiCN (Si≥3.40 at.%) coatings confronted. However, after unloading, unbalance of high compressive stress (4.74 and 4.83GPa) in CrCN and CrSiCN (0.97 at.%) coatings initiated cracks parallel to the indenter edge. On account of favorable H/E, H3/E2 and compressive stress, the CrSiCN coating with 2.05 at.% Si presented the best mechanical property and crack resistance.
AB - A series of CrSiCN coatings with various Si concentrations were deposited on Si(100) wafers, and the influence of Si content on the microstructure, mechanical property and crack resistance of the coatings was investigated by XRD, Raman spectroscopy and nanoindentation. After introducing (CH3)3SiH into precursor from 5sccm to 30sccm, the Si concentration increased from 0.97 at.% to 7.00 at.% with gradually increasing formation of amorphous SiCx and SiNx. Under low Si concentration (0.97-3.40 at.%) condition, solid solution effect and formation of nc-Cr(C,N)/a-SiNx(a-SiCx) architecture caused an increase in hardness from 18.1GPa to 21.3GPa. In contrast, at high Si concentration (5.35-7.00 at.%), larger grain separation, which resulted from the increase of a-SiNx(a-SiCx), led to a drop of hardness to a low range of 13.0-13.6 GPa and a decrease in compressive stress from 4.74 GPa to 2.78GPa. As a result, superior elasticity and high compressive stress prevented the CrSiCN (Si<3.40 at.%) coatings from radial crack, whereas the CrSiCN (Si≥3.40 at.%) coatings confronted. However, after unloading, unbalance of high compressive stress (4.74 and 4.83GPa) in CrCN and CrSiCN (0.97 at.%) coatings initiated cracks parallel to the indenter edge. On account of favorable H/E, H3/E2 and compressive stress, the CrSiCN coating with 2.05 at.% Si presented the best mechanical property and crack resistance.
KW - Crack
KW - Nanoindentation
KW - PVD coatings
KW - Residual stress
KW - SEM
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U2 - 10.1016/j.surfcoat.2015.04.001
DO - 10.1016/j.surfcoat.2015.04.001
M3 - Article
AN - SCOPUS:84929134191
SN - 0257-8972
VL - 272
SP - 239
EP - 245
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -