EXAFS study on MBE grown CuInSe2 thin film

R. Shioda; Y. Okada; H. Oyanagi; S. Niki; P. J. Fons; A. Yamada; Y. Makita

EXAFS study on MBE grown CuInSe₂ thin film

R. Shioda, Y. Okada, H. Oyanagi, S. Niki, P. J. Fons, A. Yamada, Y. Makita

Research output: Contribution to journal › Article › peer-review

Abstract

The structures of CuInSe₂(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.

Original language	English
Pages (from-to)	X9-187
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	60
Issue number	3
Publication status	Published - 1996
Externally published	Yes

Keywords

CuInSe
EXAFS

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "EXAFS study on MBE grown CuInSe2 thin film",

abstract = "The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.",

keywords = "CuInSe, EXAFS",

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TY - JOUR

T1 - EXAFS study on MBE grown CuInSe2 thin film

AU - Shioda, R.

AU - Okada, Y.

AU - Oyanagi, H.

AU - Niki, S.

AU - Fons, P. J.

AU - Yamada, A.

AU - Makita, Y.

PY - 1996

Y1 - 1996

N2 - The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.

AB - The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/In ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/In ratio. The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the Cu-Se bond in Cu-rich region is stronger than that in In-rich region. We also compare the MBE grown CIS epitaxial layer, coevaporation thin layer and bulk sample.

KW - CuInSe

KW - EXAFS

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IS - 3

ER -

EXAFS study on MBE grown CuInSe₂ thin film

Abstract

Keywords

ASJC Scopus subject areas

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