Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures

Masaki Omiya, Kozo Koiwa, Nobuyuki Shishido, Shoji Kamiya, Chuantong Chen, Hisashi Sato, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Toshiaki Suzuki, Takeshi Nokuo

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The local interfacial strength is a key factor in designing and fabricating advanced three-dimensional large-scale integration interconnect structures. In this paper, both local fracture tests and three-dimensional elastic-plastic crack propagation analysis for a 10 μm × 10 μm specimen were performed, and the local interfacial adhesion between a Cu interconnect and a SiN cap layer were evaluated. The three-dimensional elastic-plastic crack propagation simulation was developed to evaluate the interfacial adhesion that eliminated the effect of progressive plastic dissipation energy during crack propagation. The results show that the average interfacial adhesion for Cu/SiN is 4.46 ± 0.17 J/m2. The crack propagation behavior and fracture pattern depend on the interfacial adhesion, and these differences are due to the plastic yielding of the side edge of the specimen. The critical interfacial adhesion for the onset of shear fracture is 4.92 J/m2, which is the upper bound of the interfacial adhesion evaluation for the 10 μm × 10 μm specimen.

Original languageEnglish
Pages (from-to)612-621
Number of pages10
JournalMicroelectronics Reliability
Issue number4
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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