Experimental study of self-heating effect (SHE) in SOI MOSFETs: Accurate understanding of temperatures during AC conductance measurement, proposals of 2ω method and modified pulsed IV

Nobuyasu Beppu, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

In this paper, a new method for accurate characterization of MOSFETs' thermal properties is proposed. First, experimental verification of conventional AC conductance technique is conducted. We developed novel measurement techniques composed of AC conductance technique and four-probe gate resistance method. Using the new technique, it is clarified that MOSFETs' channel temperature under AC conductance measurement is not isothermal because of 'Static SHE', and that AC conductance technique is not suitable for complete thermal characterization. Next, we modified conventional pulsed IV method. It enables us to determine accurate channel thermal resistance and to obtain isothermal IV curve. The new pulsed IV method enables to measure accurate thermal properties of the devices.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages28.2.1-28.2.4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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