@inproceedings{3e901a5d0f5147208baa7d694b3b0376,
title = "Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs",
abstract = "The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, TSOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as TSOI decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.",
keywords = "CMOSFETs, Electric variables, Electron mobility, Fluctuations, MOSFET circuits, Particle scattering, Raman scattering, Residual stresses, Semiconductor films, Threshold voltage",
author = "K. Uchida and H. Watanabe and J. Koga and A. Kinoshita and S. Takagi",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",
year = "2003",
doi = "10.1109/SISPAD.2003.1233625",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "8--13",
booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",
}