Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT SOI-induced Scattering

Ken Uchida, Junji Koga, Shin ichi Takagi

Research output: Contribution to journalConference articlepeer-review

114 Citations (Scopus)

Abstract

The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.

Original languageEnglish
Pages (from-to)805-808
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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