Experimental study on electron mobility in accumulation-mode silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Junctionless, or accumulation-mode, metal-oxide-semiconductor field-effect transistors (MOSFETs), where the channel and source/drain doping types are the same, have attracted growing interests because of their simpler fabrication processes. However, carrier transport properties, in particular, mobility characteristics, in the junctionless silicon-on-insulator (SOI) MOSFETs have been less studied. Although higher mobility in accumulation-mode SOI MOSFETs has been reported, the physical mechanisms of the higher mobility have not yet been clarified. In this work, the physical mechanisms of higher mobility in accumulation-mode MOSFETs have been investigated. We fabricated junctionless SOI MOSFETs with a channel doping concentration of 1 ×10¹⁷ cm ^-3 and an SOI body thickness of 48nm whose mobility is greater than the bulk universal mobility in spite of the high doping concentration in the channel. The drain current consists of two components: one in the accumulation layer and the other in the SOI body. The mobility of each component is evaluated separately. As a result, it is revealed that the total mobility is the weighted mean of the two mobility components, where carrier concentration is the weight.