Experimental study on SET/RESET conditions for graphene resistive random access memory

Aya Shindome; Tsunaki Takahashi; Shunri Oda; Ken Uchida

doi:10.7567/JJAP.53.04EN02

Experimental study on SET/RESET conditions for graphene resistive random access memory

Aya Shindome, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SETconditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V.

Original language	English
Article number	04EN02
Journal	Japanese journal of applied physics
Volume	53
Issue number	4 SPEC. ISSUE
DOIs	https://doi.org/10.7567/JJAP.53.04EN02
Publication status	Published - 2014 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SETconditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V.",

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AB - The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SETconditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0V.

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Experimental study on SET/RESET conditions for graphene resistive random access memory

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