Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro; Takuya Saraya; Toshiro Hiramoto; Toshiaki Ikoma

doi:10.1143/jjap.35.858

Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro, Takuya Saraya, Toshiro Hiramoto, Toshiaki Ikoma

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

Original language	English
Pages (from-to)	858-860
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	2 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.858
Publication status	Published - 1996 Feb
Externally published	Yes

Keywords

MOSFET
Potential fluctuations
Random telegraph signal
Single electron trap
Split-gate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.35.858

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Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures. / Ishikuro, Hiroki; Saraya, Takuya; Hiramoto, Toshiro et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 2 SUPPL. B, 02.1996, p. 858-860.

Research output: Contribution to journal › Article › peer-review

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Y1 - 1996/2

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AB - We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

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Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

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Keywords

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